2013/11/12 ver.4 page 1 spn7002 n-channel enhancement mode mosfet description applications the spn7002 is the n-cha nnel enhancement mode field effect transistors are produced using high cell density dmos technology. these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. they can be used in most applications requiring up to 300ma dc and can deliver pulsed currents up to 1.0a. these products are particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and other switching applications. ? drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. ? high saturation current capability. direct logic-level interface: ttl/cmos ? battery operated systems ? solid-state relays features pin configuration(sot-23 , sot-323) ? 60v/0.50a , r ds(on) = 6.0 ? @v gs =10v ? 60v/0.30a , r ds(on) = 7.0 ? @v gs =5v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23 and sot-323 package design part marking
2013/11/12 ver.4 page 2 spn7002 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN7002S23RG sot-23 s72yw SPN7002S23RGb sot-23 s72yw spn7002s32rg sot-323 s72yw spn7002s32rgb sot-323 s72yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN7002S23RG : tape reel ; pb ? free SPN7002S23RGb : tape reel ; pb ? free; halogen ? free spn7002s32rg : tape reel ; pb ? free spn7002s32rgb : tape reel ; pb ? free; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 60 v gate ?source voltage - continuous v gss 20 v gate ?source voltage - non repetitive ( t p < 50 s) v gss 40 v continuous drain current(t j =150 ) t a =25 i d 0.5 a pulsed drain current ( ? ) i dm 1.0 a power dissipation t a =25 p d 0.35 w operating junction temperature t j -55 ~ 150 storage temperature range t stg -55 ~ 150 thermal resistance-junction to ambient r ja 375 /w ( ? ) pulse width limited by safe operating area
2013/11/12 ver.4 page 3 spn7002 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 60 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 1.7 2.5 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =48v,v gs =0v 1 ua v ds =48v,v gs =0v t j =55 10 drain-source on-resistance r ds(on) v gs =10v,i d =0.50a 2.5 6.0 ? v gs = 5v,i d =0.30a 3.3 7.0 source-drain current i sd 0.35 a source-drain current (pulsed) i sdm (2) 1.4 a forward transconductance gfs(1) v ds = 10 v, i d = 0.5 a 0.6 s diode forward voltage v sd (1) v gs = 0 v, i s = 0.12a 0.85 1.5 v dynamic total gate charge q g v dd = 30 v, i d = 1 a, v gs = 5 v 1.4 2.0 nc gate-source charge q gs 0.8 gate-drain charge q gd 0.5 input capacitance c iss v ds = 25 v, f = 1 mhz, v gs = 0 43 60 pf output capacitance c oss 20 30 reverse transfer capacitance c rss 6 10 turn-on time t d(on) v dd = 30 v, i d = 0.5 a r g = 4.7 ? v gs = 4.5 v 5 20 ns t r 15 turn-off time t d(off) 7 20 t f 8 (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area.
2013/11/12 ver.4 page 4 spn7002 n-channel enhancement mode mosfet typical characteristics
2013/11/12 ver.4 page 5 spn7002 n-channel enhancement mode mosfet typical characteristics
2013/11/12 ver.4 page 6 spn7002 n-channel enhancement mode mosfet typical characteristics
2013/11/12 ver.4 page 7 spn7002 n-channel enhancement mode mosfet typical testing circuit
2013/11/12 ver.4 page 8 spn7002 n-channel enhancement mode mosfet sot-23 package outline
2013/11/12 ver.4 page 9 spn7002 n-channel enhancement mode mosfet sot-323 package outline
2013/11/12 ver.4 page 10 spn7002 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan, 115, r.o.c phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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